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2N/PN/SST4117A Series
N-Channel JFETs
2N4117A 2N4118A 2N4119A Product Summary
Part Number
4117 4118 4119
PN4117A PN4118A PN4119A
SST4117 SST4118 SST4119
VGS(off) (V)
-0.6 to -1.8 -1 to -3 -2 to -6
V(BR)GSS Min (V)
-40 -40 -40
gfs Min (mS)
70 80 100
IDSS Min (mA)
30 80 200
Features
D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise
Benefits
D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals
Applications
D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment
Description
The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-206AF (TO-72)
TO-226AA (TO-92)
TO-236 (SOT-23)
S 1 4
C
D
1 D 1 3 S 2 G 2
S
2 D Top View 2N4117A 2N4118A 2N4119A
3 G
G
3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70239. Applications information may also be obtained via FaxBack, request document #70598.
Siliconix S-52424--Rev. E, 14-Apr-97
1
2N/PN/SST4117A Series
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . -65 to 175_C (PN, SST Prefix) . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . 350 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C
Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . -55 to 175_C (PN, SST Prefix) . . . . . . . . . -55 to 150_C
Specificationsa
Limits
4117 4118 4119
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS
IG = -1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -20 V VDS = 0 V VGS = -20 V VDS = 0 V TA = 150_C 2N
-70
-40 -0.6 30 -1.8 90 -1
-40 -1 80 -3 240 -1
-40 V -2 200 -6 600 -1 mA pA
-0.2
-0.4 PN SST PN/SST -0.2 -0.2 -0.03 -0.2 0.2 0.7
-2.5 -1 -10 -2.5
-2.5 -1 -10 -2.5
-2.5 -1 -10 -2.5
nA
Gate R G t Reverse Current C t
IGSS
VGS = -10 V VDS = 0 V VGS = -10 V VDS = 0 V TA = 100_C
pA
nA
Gate Operating Currentc Drain Cutoff Currentc Gate-Source Forward Voltagec
IG ID(off) VGS(F)
VDG = 15 V, ID = 30 mA VDS = 10 V, VGS = -8 V IG = 1 mA , VDS = 0 V
pA V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec gfs gos Ci iss Crss en VDS = 10 V, VGS = 0 V S f = 1 kHz 2N/PN VDS = 10 V VGS = 0 V f = 1 MHz SST 2N/PN SST VDS = 10 V, VGS = 0 V f = 1 kHz 1.2 1.2 0.3 0.3 15 nV Hz NT 1.5 1.5 1.5 pF 70 210 3 3 80 250 5 3 100 330 mS 10 3
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. This parameter not registered with JEDEC.
2
Siliconix S-52424--Rev. E, 14-Apr-97
2N/PN/SST4117A Series
Typical Characteristics
1000 I DSS - Saturation Drain Current (mA)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
300 g fs - Forward Transconductance ( m S)
1 nA
Gate Leakage Current
100 mA TA = 125_C
800
240
100 pA I G - Gate Leakage
10 mA
IGSS @ 125_C 100 mA 10 mA
600 gfs 400 IDSS 200
180
10 pA
120
60
1 pA TA = 25_C 0.1 pA 0 6
IGSS @ 25_C
0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V)
0
12
18
24
30
VDG - Drain-Gate Voltage (V)
15 rDS(on) - Drain-Source On-Resistance (k W )
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
gos
5 g fs - Forward Transconductance ( m S)
200
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = 2.5 V
g os - Output Conductance ( mS)
12 rDS 9
4
160 TA = -55_C 120 125_C 80 25_C
3
6
2
3
rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -1 -2 -3 -4 -5
1
40
VDS = 10 V f = 1 kHz 0.01 0.1 ID - Drain Current (mA) 1
0 VGS(off) - Gate-Source Cutoff Voltage (V)
0
0
Output Characteristics
100 VGS(off) = -0.7 V 80 I D - Drain Current ( m A) VGS = 0 V -0.1 V -0.2 V 40 -0.3 V -0.4 V 20 -0.5 V 400 I D - Drain Current ( m A) 500
Output Characteristics
VGS(off) = -2.5 V
VGS = 0 V 300 -0.5 V 200 -1.0 V 100 -1.5 V -2.0 V
60
0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V)
0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V)
Siliconix S-52424--Rev. E, 14-Apr-97
3
2N/PN/SST4117A Series
Typical Characteristics (Cont'd)
100
Transfer Characteristics
g fs - Forward Transconductance ( m S) VGS(off) = -0.7 V VDS = 10 V
200
Transconductance vs. Gate-Source Voltage
VGS(off) = -0.7 V VDS = 10 V f = 1 kHz
80 I D - Drain Current ( m A)
160 TA = -55_C 25_C 120
60 TA = 125_C 40 25_C
80
125_C
20 -55_C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VGS - Gate-Source Voltage (V)
40
0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VGS - Gate-Source Voltage (V)
500
Transfer Characteristics
g fs - Forward Transconductance ( m S) VGS(off) = -2.5 V VDS = 10 V
300
Transconductance vs. Gate-Source Voltage
VGS(off) = -2.5 V VDS = 10 V f = 1 kHz
400 I D - Drain Current ( m A) TA = -55_C 25_C 200
240 TA = -55_C 180 25_C
300
120 125_C 60
100
125_C
0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V)
0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100 AV + 1 ) R g L os A V - Voltage Gain Assume VDD = 15 V, VDS = 5 V R L + 10 V ID C iss - Input Capacitance (pF) 80 1.6 g fs R L 2.0
Common-Source Input Capacitance vs. Gate-Source Voltage
f = 1 MHz
60
1.2
VDS = 0 V 10 V
40
VGS(off) = -0.7 V
0.8
20 -2.5 V 0 0.01 0.1 ID - Drain Current (mA) 1
0.4
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
4
Siliconix S-52424--Rev. E, 14-Apr-97
2N/PN/SST4117A Series
Typical Characteristics (Cont'd)
0.5 C rss - Reverse Feedback Capacitance (pF)
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
f = 1 MHz
Equivalent Input Noise Voltage vs. Frequency
200 VDS = 10 V
0.4
(nV / Hz)
160
0.3
0.2
e n - Noise Voltage
VDS = 0 V
120
ID = 10 mA
10 V
80 VGS = 0 V
0.1
40
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
0 10 100 1k f - Frequency (Hz) 10 k 100 k
2
Output Conductance vs. Drain Current
20 VGS(off) = -2.5 V rDS(on) - Drain-Source On-Resistance (k W )
On-Resistance vs. Drain Current
VGS(off) = -0.7 V 16
g os - Output Conductance ( mS)
TA = -55_C
12
1 125_C
25_C
8 -2.5 V 4 TA = 25_C 0 0.01 0.1 ID - Drain Current (mA) 1
VDS = 10 V f = 1 kHz
0 0.01 0.1 ID - Drain Current (mA) 1
Siliconix S-52424--Rev. E, 14-Apr-97
5

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